Room-temperature operation of InTlSb infrared photodetectors on GaAs

被引：20

作者：

Kim, JD ^{[1
]}

Michel, E ^{[1
]}

Park, S ^{[1
]}

Xu, J ^{[1
]}

Javadpour, S ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,DEPT EECS,CTR QUANTUM DEVICES,EVANSTON,IL 60201

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 03期

关键词：

D O I：

10.1063/1.118054

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Long-wavelength InTlSb photodetectors operating at room temperature are reported. The photodetectors were grown on (100) semi-insulating GaAs substrate by low-pressure metalorganic chemical vapor deposition. Photoresponse of InTlSb photodetectors is observed up to 11 mu m at room temperature. The maximum responsivity of an In0.96Tl0.04Sb photodetector is about 6.64 V/W at 77 K, corresponding to a detectivity of about 7.64 x 10(8) cm Hz(1/2)NV. The carrier lifetime in InTlSb photodetectors derived from the stationary photoconductivity is 10-50 ns at 77 K. (C) 1996 American Institute of Physics.

引用

页码：343 / 344

页数：2

共 10 条

[1]

[Anonymous], 1995, INFRARED PHOTON DETE

[2] PHOTOCONDUCTANCE MEASUREMENTS ON INAS0.22SB0.78/GAAS GROWN USING MOLECULAR-BEAM EPITAXY [J].

BETHEA, CG ;

LEVINE, BF ;

YEN, MY ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1988, 53 (04) :291-292

[3] BACKSIDE-ILLUMINATED INASSB-GASB BROAD-BAND DETECTORS [J].

BUBULAC, LO ;

ANDREWS, AM ;

GERTNER, ER ;

CHEUNG, DT .

APPLIED PHYSICS LETTERS, 1980, 36 (09) :734-736

[4] P-N-JUNCTION FORMATION IN INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

CHIANG, PK ;

BEDAIR, SM .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :383-385

[5] GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

CHOI, YH ;

BESIKCI, C ;

SUDHARSANAN, R ;

RAZEGHI, M .

APPLIED PHYSICS LETTERS, 1993, 63 (03) :361-363

[6]

CHOI YH, 1992, P MRS, V281, P375

[7]

Kim JD, 1996, APPL PHYS LETT, V68, P99, DOI 10.1063/1.116784

[8] PHOTOCONDUCTANCE MEASUREMENTS ON INTISB/INSB/GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

STAVETEIG, PT ;

CHOI, YH ;

LABEYRIE, G ;

BIGAN, E ;

RAZEGHI, M .

APPLIED PHYSICS LETTERS, 1994, 64 (04) :460-462

[9]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[10] INTLSB - AN INFRARED DETECTOR MATERIAL [J].

VANSCHILFGAARDE, M ;

SHER, A ;

CHEN, AB .

APPLIED PHYSICS LETTERS, 1993, 62 (16) :1857-1859

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