Energy distribution of the (100)Si/HfO2 interface states

被引：29

作者：

Fedorenko, YG ^{[1
]}

Truong, L ^{[1
]}

Afanas'ev, VV ^{[1
]}

Stesmans, A ^{[1
]}

机构：

[1] Univ Louvain, Dept Phys, B-3001 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 23期

关键词：

D O I：

10.1063/1.1758302

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The energy distributions of interface states were determined in (100)Si/HfO2 using capacitance-voltage measurements on structures with the periphery of the metal electrode switched to inversion by controlled application of corona discharge. Together with independently applied ac conductance spectroscopy they reveal a strong impact of the HfO2 deposition technique on the interface trap density. This includes the enhancement of the Si-dangling bond defect (P-b0 centers) density and a contribution of insulator-related traps in samples deposited using a nitrogen-containing precursor. (C) 2004 American Institute of Physics.

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页码：4771 / 4773

页数：3

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