NATURE OF DEFECTS IN THE SI-SIO2 SYSTEM GENERATED BY VACUUM-ULTRAVIOLET IRRADIATION

被引：34

作者：

DRUIJF, KG

DENIJS, JMM

VANDERDRIFT, E

GRANNEMAN, EHA

BALK, P

机构：

[1] DIMES, Delft University of Technology, 2600 GB Delft

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 03期

关键词：

D O I：

10.1063/1.112971

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used high-frequency and quasi-static capacitance-voltage measurements to study the properties of interface states generated upon vacuum-ultraviolet irradiation under positive gate bias followed by neutralization of the holes trapped in the oxide. The data indicate the exclusive generation of fast donor-type states that anneal at room temperature. We propose that these states explain the turn-around effect and annealing of positive charge.

引用

页码：347 / 349

页数：3

共 18 条

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