Silicon nanowires with sub 10 nm lateral dimensions:: From atomic force microscope lithography based fabrication to electrical measurements

被引:29
作者
Legrand, B [1 ]
Deresmes, D [1 ]
Stiévenard, D [1 ]
机构
[1] CNRS, UMR 8520, Dept ISEN, IEMN, F-59652 Villeneuve Dascq, France
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 03期
关键词
D O I
10.1116/1.1470519
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ability of the atomic force microscope (AFM) to realize lithography patterns on silicon surfaces is widely known and leads to the formation of silicon nanostructures after an etching step. In this article, we aim at improving the fabrication process to yield silicon nanowires with minimum lateral dimensions for the realization of Coulomb blockade based devices. First, we focus on the AFM lithography step: using pulsed voltages for the anodic oxidation of the silicon surface instead of the commonly employed continuous polarization, we obtain an improvement of both AFM lithography resolution and tip reliability. Second, after the wet etching step, we present a technique of oxidation/deoxidation cycles, which allows a controlled thinning of the silicon wires. Combining these two techniques, we obtain silicon nanowires the widths of which are lower than 10 nm. Finally, as the wires are made on a silicon on insulator substrate, it opens the way to electrical characterization and we present some realizations and results. (C) 2002 American Vacuum Society.
引用
收藏
页码:862 / 870
页数:9
相关论文
共 40 条
[21]  
GRAF D, 1989, J VAC SCI TECHNOL A, V7, P808, DOI 10.1116/1.575845
[22]   Nanooxidation of silicon with an atomic force microscope: A pulsed voltage technique [J].
Legrand, B ;
Stievenard, D .
APPLIED PHYSICS LETTERS, 1999, 74 (26) :4049-4051
[23]   Atomic force microscope tip-surface behavior under continuous bias or pulsed voltages in noncontact mode [J].
Legrand, B ;
Stiévenard, D .
APPLIED PHYSICS LETTERS, 2000, 76 (08) :1018-1020
[24]   Growth of silicon oxide on hydrogenated silicon during lithography with an atomic force microscope [J].
Marchi, F ;
Bouchiat, V ;
Dallaporta, H ;
Safarov, V ;
Tonneau, D ;
Doppelt, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :2952-2956
[25]   FABRICATION OF 0.1-MU-M METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH THE ATOMIC-FORCE MICROSCOPE [J].
MINNE, SC ;
SOH, HT ;
FLUECKIGER, P ;
QUATE, CF .
APPLIED PHYSICS LETTERS, 1995, 66 (06) :703-705
[26]   Si nanofabrication using AFM field enhanced oxidation and anisotropic wet chemical etching [J].
Morimoto, K ;
Araki, K ;
Yamashita, K ;
Morita, K ;
Niwa, M .
APPLIED SURFACE SCIENCE, 1997, 117 :652-659
[27]   The electronic structure at the atomic scale of ultrathin gate oxides [J].
Muller, DA ;
Sorsch, T ;
Moccio, S ;
Baumann, FH ;
Evans-Lutterodt, K ;
Timp, G .
NATURE, 1999, 399 (6738) :758-761
[28]  
Nicollian E. H., 1982, MOS METAL OXIDE SEMI
[29]  
Pérez-Murano F, 1999, APPL PHYS LETT, V75, P199, DOI 10.1063/1.124318
[30]   NANOMETER-SCALE OXIDATION OF SI(100) SURFACES BY TAPPING MODE ATOMIC-FORCE MICROSCOPY [J].
PEREZMURANO, F ;
ABADAL, G ;
BARNIOL, N ;
AYMERICH, X ;
SERVAT, J ;
GOROSTIZA, P ;
SANZ, F .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (11) :6797-6801