Pulsed laser deposition of ZnO thin films using a femtosecond laser

被引：55

作者：

Okoshi, M ^{[1
]}

Higashikawa, K ^{[1
]}

Hanabusa, M ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Tenpa Ku, Toyohashi, Aichi 4418580, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 154卷

关键词：

ZnO film; femtosecond laser; pulsed laser deposition; transparency; electric conduction;

D O I：

10.1016/S0169-4332(99)00392-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Transparent, conductive ZnO films were deposited by pulsed laser deposition (PLD) using 790-nm, 130-fs laser pulses. An optical transmittance as high as 88% in the visible region was obtained when deposited above 150 degrees C. The electrical resistivity of the films was 10(-1) to 10(-3) Omega cm between room temperature and 270 degrees C. Sharp X-ray diffraction (XRD) peaks were observed for films deposited above 150 degrees C on both quartz and Si. The results were obtained in absence of oxygen gas during the deposition, unlike in previous PLD where nanosecond laser pulses were used. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：424 / 427

页数：4

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