Comparative study of ITO and FTO thin films grown by spray pyrolysis

被引：161

作者：

Aouaj, M. Ait ^{[1
]}

Diaz, R. ^{[2
]}

Belayachi, A. ^{[1
]}

Rueda, F. ^{[2
]}

Abd-Lefdil, M. ^{[1
]}

机构：

[1] Univ Mohammed V Agdal, Met Phys Lab, Rabat, Morocco

[2] Univ Autonoma Madrid, Dept Fis Aplicada C12, Madrid, Spain

来源：

MATERIALS RESEARCH BULLETIN | 2009年 / 44卷 / 07期

关键词：

Thin films; X-ray diffraction; Optical properties; Electrical properties; TIN OXIDE; ELECTRICAL-PROPERTIES; TRANSPARENT; SNO2; DEPOSITION; FLUORINE;

D O I：

10.1016/j.materresbull.2009.02.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tin doped indium oxide (ITO) and fluorine doped tin oxide (FTO) thin films have been prepared by one step spray pyrolysis. Both film types grown at 400 degrees C present a single phase, ITO has cubic structure and preferred orientation (400) while FTO exhibits a tetragonal structure. Scanning electron micrographs showed homogeneous surfaces with average grain size around 257 and 190 nm for ITO and FTO respectively. The optical properties have been studied in several ITO and FTO samples by transmittance and reflectance measurements. The transmittance in the visible zone is higher in ITO than in FTO layers with a comparable thickness, while the reflectance in the infrared zone is higher in FTO in comparison with ITO. The best electrical resistivity values, deduced from optical measurements, were 8 X 10(-4) and 6 x 10(-4) Omega cm for ITO (6% of Sn) and FTO (2.5% of F) respectively. The figure of merit reached a maximum value of 2.15 x 10(-3) Omega(-1) for ITO higher than 0.55 X 10-3 Omega(-1) for FTO. (c) 2009 Elsevier Ltd. All rights reserved.

引用

页码：1458 / 1461

页数：4

共 33 条

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