Temperature dependent breakdown characteristics in InP/InGaAs avalanche photodiodes

被引：3

作者：

Hyun, KS

Park, CY

Kim, HM

机构：

[1] Electronics and Telecommunications, Research Inst, Taejon, Korea, Republic of

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1996年 / 35卷 / 3A期

关键词：

InP/InGaAs avalanche photodiode; separated absorption and multiplication APD; temperature coefficient; temperature dependent avalanche breakdown voltage; multiplication layer width;

D O I：

10.1143/JJAP.35.L301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The temperature dependence on the breakdown voltages of InP/InGaAs avalanche photodiode was investigated in the range between -20 degrees C and 100 degrees C. It was found that the normalized first derivative of the breakdown voltage with respect to temperature decreased linearly as the breakdown voltage increased. Furthermore, the extrapolations of all the tested samples converge at the temperature independent limiting value of breakdown voltage. According to our analysis on these phenomena, we propose an empirical formula of temperature dependent breakdown voltages.

引用

收藏

页码：L301 / L303

页数：3

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