Status and Trends in Ge CMOS Technology

被引：17

作者：

Claeys, C. ^{[1
]}

Mitard, J. ^{[1
]}

Hellings, G. ^{[1
]}

Eneman, G. ^{[1
]}

De Jaeger, B. ^{[1
]}

Witters, L. ^{[1
]}

Loo, R. ^{[1
]}

Delabie, A. ^{[1
]}

Sioncke, S. ^{[1
]}

Caymax, M. ^{[1
]}

Simoen, E. ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

来源：

2013 INTERNATIONAL CONFERENCE ON SEMICONDUCTOR TECHNOLOGY FOR ULTRA LARGE SCALE INTEGRATED CIRCUITS AND THIN FILM TRANSISTORS (ULSIC VS. TFT 4) | 2013年 / 54卷 / 01期

关键词：

ATOMIC LAYER DEPOSITION; GERMANIUM MOSFETS; GATE; PERFORMANCE; OPPORTUNITIES; CHALLENGES; PMOSFET; FILMS; FIELD;

D O I：

10.1149/05401.0025ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Since the last decade there has been renewed interest in Ge-based technologies for deep submicron CMOS technologies. Whereas good performance data has been reported for p-channel MOSFETs this was not the case for the n-channel counterpart. This manuscript first reviews some key technological aspects for Ge processing, before outlining the status and trends for p-and n-channel Ge MOSFETs in relation to the ITRS specifications. Special attention will be given to GeSn technologies.

引用

收藏

页码：25 / 37

页数：13

相关论文

共 52 条

[41] Opportunities and challenges for Ge CMOS - Control of interfacing field on Ge is a key [J].

Toriumi, Akira ;

Tabata, Toshiyuki ;

Lee, Choong Hyun ;

Nishimura, Tomonori ;

Kita, Koji ;

Nagashio, Kosuke .

MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1571-1576

[42] Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition [J].

Vincent, B. ;

Gencarelli, F. ;

Bender, H. ;

Merckling, C. ;

Douhard, B. ;

Petersen, D. H. ;

Hansen, O. ;

Henrichsen, H. H. ;

Meersschaut, J. ;

Vandervorst, W. ;

Heyns, M. ;

Loo, R. ;

Caymax, M. .

APPLIED PHYSICS LETTERS, 2011, 99 (15)

[43] High quality Ge epitaxial layers in narrow channels on Si (001) substrates [J].

Wang, G. ;

Rosseel, E. ;

Loo, R. ;

Favia, P. ;

Bender, H. ;

Caymax, M. ;

Heyns, M. M. ;

Vandervorst, W. .

APPLIED PHYSICS LETTERS, 2010, 96 (11)

[44]

Wang G., 2012, THESIS KU LEUVEN

[45] Ge/Si nanowire heterostructures as high-performance field-effect transistors [J].

Xiang, Jie ;

Lu, Wei ;

Hu, Yongjie ;

Wu, Yue ;

Yan, Hao ;

Lieber, Charles M. .

NATURE, 2006, 441 (7092) :489-493

[46]

Yamamoto T, 2007, INT EL DEVICES MEET, P1041

[47] Advanced strain engineering for state-of-the-art nanoscale CMOS technology [J].

Yang Bin ;

Cai Ming .

SCIENCE CHINA-INFORMATION SCIENCES, 2011, 54 (05) :946-958

[48] Parallel core-shell metal-dielectric-semiconductor germanium nanowires for high-current surround-gate field-effect transistors [J].

Zhang, Li ;

Tu, Ryan ;

Dai, Hongjie .

NANO LETTERS, 2006, 6 (12) :2785-2789

[49]

Zhang Q., 2011, INT EL DEV M IEDM1 I, P728

[50] High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation [J].

Zhang, Rui ;

Huang, Po-Chin ;

Lin, Ju-Chin ;

Taoka, Noriyuki ;

Takenaka, Mitsuru ;

Takagi, Shinichi .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (03) :927-934

← 1 2 3 4 5 6 →