An InGaN-based horizontal-cavity surface-emitting laser diode

被引：5

作者：

Akasaka, T

Nishida, T

Makimoto, T

Kobayashi, N

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Univ Electrocommun, Dept Appl Phys & Chem, Chofu, Tokyo 1828585, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 20期

关键词：

D O I：

10.1063/1.1753068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InGaN-based horizontal-cavity surface-emitting laser diode (HCSELD) was fabricated by dry-etching of an InGaN-based multilayer on a SiC substrate and selective-area regrowth of a Mg-doped GaN layer. The InGaN-based HCSELD is a Fabry-Perot laser diode equipped with outer micromirrors that reflect the laser beams upward. The cavity mirrors and outer micromirrors are vertical {11 (2) over bar0} and inclined {11 (2) over bar2} facets of the regrown Mg-doped GaN layers, respectively. These grown facets are very smooth and had little angle misalignment. The InGaN-based HCSELD lased by current injection at room temperature. Current-injection lasing for group-III-nitride-based surface-emitting lasers is reported. (C) 2004 American Institute of Physics.

引用

页码：4104 / 4106

页数：3

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