Effects of As and Mn doping on microstructure and electrical conduction in ZnO films

被引：26

作者：

Lord, K. ^{[1
]}

Williams, T. M. ^{[1
]}

Hunter, D. ^{[1
]}

Zhang, K. ^{[1
]}

Dadson, J. ^{[1
]}

Pradhan, A. K. ^{[1
]}

机构：

[1] Norfolk State Univ, Ctr Mat Res, Norfolk, VA 23504 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 26期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1063/1.2217257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the synthesis of epitaxial As-doped ZnO and Mn-doped (ZnAs)O films by pulsed-laser deposition technique. The grain size in (ZnAs)O films decreases from 40 to less than 10 nm upon Mn doping, illustrating that Mn acts as a potential catalyst to create nanosize grains. Temperature dependent electrical resistance shows metal-insulator transition and metal-semiconductor transition (MST) at 165 and 115 K, respectively, in (ZnAs)O, although Mn doping suppresses MST completely. Both ionization efficiency on oxygen vacancies and percolation of charge carriers may be responsible for such transitions. In addition, electrical conduction in these films shows strong aging effects.

引用

页数：3

共 12 条

[1] ZnO diode fabricated by excimer-laser doping [J].