Effect of silicon doping on the optical and transport properties of InGaN/GaN multiple-quantum-well structures

被引：67

作者：

Wang, T

Saeki, H

Bai, J

Shirahama, T

Lachab, M

Sakai, S

Eliseev, P

机构：

[1] Univ Tokushima, Dept Elect & Elect Engn, Satellite Venture Business Lab, Tokushima 770, Japan

[2] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 13期

关键词：

D O I：

10.1063/1.126151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent photoluminescence and transport measurements were performed on the In0.13Ga0.87N:Si/GaN:Si multiple-quantum-well (MQW) structures with different doping levels. By fitting the temperature-dependent emission energy of these samples using the band tail model, an obvious localization effect is observed in lightly doped MQW structures. Correspondingly, the electron mobilities in these structures are significantly higher than those of undoped and heavily doped MQW structures. Furthermore, when the localization effect is stronger, the mobility is higher. (C) 2000 American Institute of Physics. [S0003-6951(00)04212-1].

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页码：1737 / 1739

页数：3

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