Electronic structure of (001)(AlAs)(k)(GaAs)(l)(AlAs)(m)(GaAs)(n) superlattices

被引：9

作者：

FernandezAlvarez, L ^{[1
]}

Monsivais, G ^{[1
]}

Velasco, VR ^{[1
]}

机构：

[1] UNIV NACL AUTONOMA MEXICO,INST FIS,MEXICO CITY 01000,DF,MEXICO

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1996年 / 8卷 / 45期

关键词：

D O I：

10.1088/0953-8984/8/45/019

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic structure of (001) (AlAs)(k)(GaAs)(l)(AlAs)(m)(GaAs)(n) superlattices is studied for many combinations of values of k, l, in and n. We have charted the regions of indirect gap and direct gap respectively by studying energy eigenvalues, especially band-edge levels, and also the spatial dependence of the local amplitude of some representative states, in order to obtain information on the confinement problems. The calculations are based on an sp(3)s* empirical tight-binding model and on the surface Green-function-matching method.

引用

页码：8859 / 8867

页数：9

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