OPTICAL ANISOTROPY OF (113)-ORIENTED GAAS/ALAS SUPERLATTICES

被引:29
作者
ARMELLES, G [1 ]
CASTRILLO, P [1 ]
DOMINGUEZ, PS [1 ]
GONZALEZ, L [1 ]
RUIZ, A [1 ]
CONTRERASSOLORIO, DA [1 ]
VELASCO, VR [1 ]
GARCIAMOLINER, F [1 ]
机构
[1] CSIC, INST CIENCIA MAT, E-28006 MADRID, SPAIN
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 19期
关键词
D O I
10.1103/PhysRevB.49.14020
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical properties of (113)-oriented GaAs/AlAs superlattices grown by atomic-layer molecular-beam epitaxy at low substrate temperature have been studied by means of piezoreflectance techniques. Several transitions have been detected which exhibit heavy-hole and light-hole character. The heavy-hole transitions are more polarized along the [332BAR] direction whereas the light-hole transitions are more polarized along the [110BAR] direction. We have also performed calculations for these superlattices by using an empirical tight-binding Hamiltonian. According to the results thus obtained the observed optical anisotropy is related to the different components of the valence-band wave functions of the superlattices.
引用
收藏
页码:14020 / 14023
页数:4
相关论文
共 20 条
[1]  
[Anonymous], 1992, THEORY SINGLE MULTIP
[2]   SPECTRAL PHENOMENOLOGY OF (001) ALAS-GAAS SUPERLATTICES [J].
ARMELLES, G ;
MUNOZ, MC ;
VELASCO, VR ;
GARCIAMOLINER, F .
SUPERLATTICES AND MICROSTRUCTURES, 1990, 7 (01) :23-27
[3]   ATOMIC LAYER MOLECULAR-BEAM EPITAXY (ALMBE) OF III-V COMPOUNDS - GROWTH MODES AND APPLICATIONS [J].
BRIONES, F ;
GONZALEZ, L ;
RUIZ, A .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (06) :729-737
[4]   PIEZOELECTRIC-FIELD-INDUCED LOCALIZATION OF BARRIER STATES IN (211)-ORIENTED INAS/GAAS SUPERLATTICES [J].
CASTRILLO, P ;
ALONSO, MI ;
ARMELLES, G ;
ILG, M ;
PLOOG, K .
PHYSICAL REVIEW B, 1993, 47 (19) :12945-12948
[5]   SPIN-ORBIT-SPLITTING IN CRYSTALLINE AND COMPOSITIONALLY DISORDERED SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW B, 1977, 16 (02) :790-796
[6]   THEORY OF DIELECTRIC-FUNCTION ANISOTROPIES OF (001) GAAS (2X1) SURFACES [J].
CHANG, YC ;
ASPNES, DE .
PHYSICAL REVIEW B, 1990, 41 (17) :12002-12012
[7]   ELECTRONIC STATES OF (001) AND (311) ALAS/GAAS QUANTUM-WELLS [J].
CONTRERASSOLORIO, DA ;
VELASCO, VR ;
GARCIAMOLINER, F .
PHYSICAL REVIEW B, 1993, 48 (16) :12319-12322
[8]   ELECTRONIC-STRUCTURE OF (311) ALAS-GAAS SUPERLATTICES [J].
CONTRERASSOLORIO, DA ;
VELASCO, VR ;
GARCIAMOLINER, F .
PHYSICAL REVIEW B, 1993, 47 (08) :4651-4654
[9]   ELECTRONIC-STRUCTURE OF (113)-GROWN GAAS-(GAAL)AS SINGLE QUANTUM-WELLS UNDER BIAXIAL STRAIN FIELDS [J].
ELKHALIFI, Y ;
LEFEBVRE, P ;
ALLEGRE, J ;
GIL, B ;
MATHIEU, H ;
FUKUNAGA, T .
SOLID STATE COMMUNICATIONS, 1990, 75 (08) :677-682
[10]   ANISOTROPIC OPTICAL-PROPERTIES OF (110)-ORIENTED QUANTUM-WELLS [J].
GERSHONI, D ;
BRENER, I ;
BARAFF, GA ;
CHU, SNG ;
PFEIFFER, LN ;
WEST, K .
PHYSICAL REVIEW B, 1991, 44 (04) :1930-1933