PIEZOELECTRIC-FIELD-INDUCED LOCALIZATION OF BARRIER STATES IN (211)-ORIENTED INAS/GAAS SUPERLATTICES

被引：7

作者：

CASTRILLO, P ^{[1
]}

ALONSO, MI ^{[1
]}

ARMELLES, G ^{[1
]}

ILG, M ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH, W-7000 STUTTGART 80, GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.47.12945

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We observe localized states whose energy is resonant with the continuum in GaAs with periodically inserted {211}-InAs sheets. Evidence for these states comprises excitonic interband transitions above the gap of GaAs, observed by piezoreflectance and photoluminescence-excitation spectroscopies. This localization has its origin in the strain-induced electric field existing in the InAs layers, which we show by simulations of the dielectric function based on envelope-function-type calculations.

引用

页码：12945 / 12948

页数：4

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