Nanomorph silicon grown on template alumina substrate by plasma-enhanced CVD

被引：5

作者：

Khodin, A. ^{[1
]}

Joong-Kee, Lee ^{[1
]}

Chang-Sam, Kim ^{[1
]}

Sang-Ok, Kim ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Seoul 130650, South Korea

来源：

MATERIALS LETTERS | 2009年 / 63卷 / 29期

关键词：

Silicon; Nanocrystals; Amorphous materials; Plasma processing; Chemical vapour deposition; Template; RAMAN-SPECTROSCOPY; MICROCRYSTALLINE SILICON; CRYSTALLITE SIZE; NANOWIRES; PHASE; FILMS; MECHANISM;

D O I：

10.1016/j.matlet.2009.09.002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Novel morphology of amorphous/nanocrystalline (nanomorph) silicon has been obtained by plasma enhanced CVD using template porous alumina substrate. The growing heterogeneous Si layer is composed of nanocrystalline and amorphous distinct areas, conformal to the tipped/ribbed alumina template. Raman spectroscopy and XRD data evidence the plasma-assisted preferential growth of nanocrystalline Si bunches forming the honeycomb net and presumably amorphous Si:H areas between them. (C) 2009 Elsevier B.V. All rights reserved.

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收藏

页码：2552 / 2555

页数：4

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