RAMAN-SCATTERING CHARACTERIZATION OF RESIDUAL-STRESSES IN SILICON-ON-SAPPHIRE

被引：26

作者：

YAMAZAKI, K ^{[1
]}

YAMADA, M ^{[1
]}

YAMAMOTO, K ^{[1
]}

ABE, K ^{[1
]}

机构：

[1] KOBE UNIV,FAC ENGN,DEPT ELECTR,KOBE 657,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1984年 / 23卷 / 06期

关键词：

D O I：

10.1143/JJAP.23.681

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：681 / 686

页数：6

共 16 条

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[2] RAMAN MEASUREMENTS OF STRESS IN SILICON-ON-SAPPHIRE DEVICE STRUCTURES
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[3] STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS
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[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02): : 580 - +
[4] EFFECTS OF INTERBAND EXCITATIONS ON RAMAN PHONONS IN HEAVILY DOPED N-SI
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[J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1623 - 1633
[5] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K
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[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155
[6] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE
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[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2700 - &
[7] DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY
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ABSTREITER, G
PONTCHARRA, J
[J]. SOLID-STATE ELECTRONICS, 1980, 23 (01) : 31 - 33
[8] HAYES W, 1978, SCATTERING LIGHT CRY, P88
[9] STRESS-INDUCED ANISOTROPY IN ELECTRICAL PROPERTIES OF SI-AL2O3
HUGHES, AJ
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2849 - 2863
[10] HYNECEK J, 1974, J APPL PHYS, V45, P2631, DOI 10.1063/1.1663642

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