Micro-Raman study of UV laser ablation of GaAs and Si substrates

被引：6

作者：

Garcia, C

Ramos, J

Prieto, AC

Jimenez, J

Geertsen, C

Lacour, JL

Mauchien, P

机构：

[1] UNIV VALLADOLID,FAC CIENCIAS & ETS INGN IND,E-47011 VALLADOLID,SPAIN

[2] SPEA,DPE,LAB SPECT LASER ANALYT,F-91191 GIF SUR YVETTE,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1996年 / 96-8卷

关键词：

D O I：

10.1016/0169-4332(95)00488-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Laser ablation of semiconductors presents an increasing interest for different purposes, such as surface modification. Morphologic and structural changes induced by UV-pulsed laser beams on GaAs and Si are studied by means of surface topography (optical interferometry) and micro-Raman spectroscopy. Crystal order and chemical composition (stoichiometry and dopant distribution) are shown to be changed by the ablation with energy above the melting threshold. Results are compared for GaAs and Si substrates.

引用

页码：370 / 375

页数：6

共 11 条

[1] EXCIMER-LASER ANNEALED OHMIC CONTACTS TO N-GAAS SUBSTRATES THROUGH AN ULTRATHIN REACTED LAYER [J].