Al composition dependence of breakdown voltage in AlxGa1-xN Schottky rectifiers

被引：48

作者：

Zhang, AP ^{[1
]}

Dang, G

Ren, F

Han, J

Polyakov, AY

Smirnov, NB

Govorkov, AV

Redwing, JM

Cao, XA

Pearton, SJ

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] Inst Rare Met, Moscow 109017, Russia

[4] Epitron, Phoenix, AZ 85027 USA

[5] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 13期

关键词：

D O I：

10.1063/1.126161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Planar geometry, lateral Schottky rectifiers were fabricated on high resistivity AlxGa1-xN (x = 0-0.25) epitaxial layers grown on sapphire substrates. The reverse breakdown voltages of unpassivated devices increased with Al composition, varying from 2.3 kV for GaN to 4.3 kV for Al0.25Ga0.75N. The reverse current-voltage (I-V) characteristics showed classical Shockley-Read-Hall recombination as the dominant mechanism, with I proportional to V-0.5. The reverse current density in all diodes was in the range 5-10 x 10(-6) A cm(-2) at 2 kV. The use of p(+) guard rings was effective in preventing premature edge breakdown and with optimum ring width increased V-B from 2.3 to 3.1 kV in GaN diodes. (C) 2000 American Institute of Physics. [S0003-6951(00)00813-5].

引用

页码：1767 / 1769

页数：3

共 16 条

[1] THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING [J].

ADLER, MS ;

TEMPLE, VAK ;

FERRO, AP ;

RUSTAY, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :107-113

[2]

AMANO H, 1999, EMIS DATA REV

[3]

Baliga B. J., 1996, POWER SEMICONDUCTOR

[4] High voltage (450 V) GaN schottky rectifiers [J].

Bandic, ZZ ;

Bridger, PM ;

Piquette, EC ;

McGill, TC ;

Vaudo, RP ;

Phanse, VM ;

Redwing, JM .

APPLIED PHYSICS LETTERS, 1999, 74 (09) :1266-1268

[5]

Chyi JI, 1999, MRS INTERNET J N S R, V4

[6] Junction barrier Schottky diodes in 4H-SiC and 6H-SiC [J].

Dahlquist, F ;

Zetterling, CM ;

Ostling, M ;

Rottner, K .

SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 :1061-1064

[7] Recent developments in SiC device research [J].

Harris, CI ;

Konstantinov, AO .

PHYSICA SCRIPTA, 1999, T79 :27-31

[8]

Heydt GT, 1998, MATER RES SOC SYMP P, V483, P3

[9] Uniformity and high temperature performance of X-band nitride power hemts fabricated from 2-inch epitaxy [J].

Hickman, R ;

Van Hove, JM ;

Chow, PP ;

Klaassen, JJ ;

Wowchack, AM ;

Polley, CJ .

SOLID-STATE ELECTRONICS, 1998, 42 (12) :2183-2185

[10] 5.5 kV bipolar diodes from high quality cvd 4H-SiC [J].

Irvine, KG ;

Singh, R ;

Paisley, MJ ;

Palmour, JW ;

Kordina, O ;

Carter, CH .

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 :119-124

← 1 2 →