Synthesis and microstructural characterization of growth direction controlled ZnO nanorods using a buffer layer

被引:34
作者
Park, Dong Jun
Kim, Dong Chan
Lee, Jeong Yong
Cho, Hyung Koun
机构
[1] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, Gyeonggi Do, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
关键词
D O I
10.1088/0957-4484/17/20/032
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The growth direction and morphology of one-dimensional ZnO nanostructures grown by metal-organic chemical vapour deposition (MOCVD) were modulated by changing the growth temperature of previously deposited ZnO buffer layers that were used as a template. The ZnO nanorods grown on the low-temperature deposited buffer layer were regularly inclined with respect to the substrate surface and show in-plane alignment with azimuthally six-fold symmetry. In contrast, deposition of the buffer layer at higher growth temperature led to the formation of vertically well-aligned ZnO nanorods. In addition, the ZnO nanorods grown on the buffer layer deposited at low growth temperature show a growth direction of [10 (1) over bar0], unlike the conventional ZnO nanorods showing a growth direction of [0001]. The microstructural analysis and atomic modelling of the formation of regularly inclined nanorods using transmission electron microscopy are presented.
引用
收藏
页码:5238 / 5243
页数:6
相关论文
共 26 条
[1]   Semiconductor clusters, nanocrystals, and quantum dots [J].
Alivisatos, AP .
SCIENCE, 1996, 271 (5251) :933-937
[2]   Field-effect transistors based on single semiconducting oxide nanobelts [J].
Arnold, MS ;
Avouris, P ;
Pan, ZW ;
Wang, ZL .
JOURNAL OF PHYSICAL CHEMISTRY B, 2003, 107 (03) :659-663
[3]   Epitaxial growth of ZnO nanowires on a- and c-plane sapphire [J].
Baxter, JB ;
Aydil, ES .
JOURNAL OF CRYSTAL GROWTH, 2005, 274 (3-4) :407-411
[4]   ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy [J].
Chan, YF ;
Duan, XF ;
Chan, SK ;
Sou, IK ;
Zhang, XX ;
Wang, N .
APPLIED PHYSICS LETTERS, 2003, 83 (13) :2665-2667
[5]   The substrate effect on the in-plane orientation of vertically well-aligned ZnO nanorods grown on ZnO buffer layers [J].
Cheng, HM ;
Hsu, HC ;
Yang, S ;
Wu, CY ;
Lee, YC ;
Lin, LJ ;
Hsieh, WF .
NANOTECHNOLOGY, 2005, 16 (12) :2882-2886
[6]   Uniaxial locked epitaxy of ZnO on the a face of sapphire [J].
Fons, P ;
Iwata, K ;
Yamada, A ;
Matsubara, K ;
Niki, S ;
Nakahara, K ;
Tanabe, T ;
Takasu, H .
APPLIED PHYSICS LETTERS, 2000, 77 (12) :1801-1803
[7]   Rectifying behavior of electrically aligned ZnO nanorods [J].
Harnack, O ;
Pacholski, C ;
Weller, H ;
Yasuda, A ;
Wessels, JM .
NANO LETTERS, 2003, 3 (08) :1097-1101
[8]   Room-temperature ultraviolet nanowire nanolasers [J].
Huang, MH ;
Mao, S ;
Feick, H ;
Yan, HQ ;
Wu, YY ;
Kind, H ;
Weber, E ;
Russo, R ;
Yang, PD .
SCIENCE, 2001, 292 (5523) :1897-1899
[9]   Molten salt route toward the growth of ZnO nanowires in unusual growth directions [J].
Jiang, ZY ;
Xu, T ;
Xie, ZX ;
Lin, ZW ;
Zhou, X ;
Xu, X ;
Huang, RB ;
Zheng, LS .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (49) :23269-23273
[10]   ZnO nanomaterials synthesized from thermal evaporation of ball-milled ZnO powders [J].
Lee, JS ;
Park, K ;
Kang, MI ;
Park, IW ;
Kim, SW ;
Cho, WK ;
Han, HS ;
Kim, S .
JOURNAL OF CRYSTAL GROWTH, 2003, 254 (3-4) :423-431