MoS2 Field-Effect Transistors With Graphene/Metal Heterocontacts

被引：144

作者：

Du, Yuchen ^{[1
]}

Yang, Lingming ^{[1
]}

Zhang, Jingyun ^{[1
]}

Liu, Han ^{[1
]}

Majumdar, Kausik ^{[2
]}

Kirsch, Paul D. ^{[2
]}

Ye, Peide D. ^{[1
]}

机构：

[1] Purdue Univ, Birck Nanotechnol Ctr, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] SEMATECH, Albany, NY 12203 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 05期

关键词：

MoS2; graphene; heterocontacts; MOSFET; Schottky barrier height; TRANSITION;

D O I：

10.1109/LED.2014.2313340

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

080906 [电磁信息功能材料与结构]; 082806 [农业信息与电气工程];

摘要：

For the first time, n-type few-layer MoS2 field-effect transistors (FETs) with graphene/Ti as the heterocontacts have been fabricated, showing more than 160-mA/mm drain current at 1-mu m gate length with an ON-OFF current ratio of 10(7). The enhanced electrical characteristic is confirmed in a nearly 2.1 times improvement in ON-resistance and a 3.3 times improvement in contact resistance with heterocontacts compared with the MoS2 FETs without graphene contact layer. Temperature-dependent study on MoS2/graphene heterocontacts has been also performed, still unveiling its Schottky contact nature. Transfer length method and a devised I-V method have been introduced to study the contact resistance and Schottky barrier height in MoS2/graphene/metal heterocontacts structure.

引用

页码：599 / 601

页数：3

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