Quantum size effects on the conductivity in porous silicon

被引：29

作者：

Lee, WH ^{[1
]}

Lee, CC ^{[1
]}

Jang, J ^{[1
]}

机构：

[1] KYUNG HEE UNIV, DEPT PHYS, SEOUL 130701, SOUTH KOREA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 198卷

关键词：

D O I：

10.1016/0022-3093(96)00082-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The quantum confinement effect was examined by measuring dark conductivity and optical transmittance of free-standing porous silicon films of different porosities. With increasing porosity from 40 to 80%, the transmission spectrum shows a blue shift and the activation energy of the conductivity increases from 0.3 to 1.0 eV. Using the activation energies, confinement energies are estimated with respect to the crystallite size, determined from the given porosity, and the results are compared with previous works. Good agreement is obtained.

引用

页码：911 / 914

页数：4

共 16 条

[1]

BASMAJI P, 1993, MAT RES S C, V283, P227

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].