The 1.6-kV AlGaN/GaN HFETs

被引：154

作者：

Tipirneni, N. ^{[1
]}

Koudymov, A. ^{[1
]}

Adivaraban, V. ^{[1
]}

Yang, J. ^{[1
]}

Simin, G. ^{[1
]}

Khan, M. Asif ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 09期

关键词：

AlGaN/GaN HFET; breakdown voltage; high-electron mobility transistor (HEMT); high-voltage power device; surface flashover;

D O I：

10.1109/LED.2006.881084

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The breakdown voltages in unpassivated nonfield-plated AlGaN/GaN HFETs on sapphire substrates were studied. These studies reveal that the breakdown is limited by the surface flashover rather than by the AlGaN/GaN channel. After elimination of the surface flashover in air, the breakdown voltage scaled linearly with the gate-drain spacing reaching 1.6 kV at 20 mu m. The corresponding static ON-resistance was as low as 3.4 m Omega(.)cm(2). This translates to a power device figure-of-merit V(BR)(2)/R(ON) = 7.5 x 10(8) V(2 .) n(-1) cm(-2), which, to date, is among the best reported values for an AlGaN/GaN HFET.

引用

页码：716 / 718

页数：3

共 15 条

[1] Trends in power semiconductor devices [J].

Baliga, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (10) :1717-1731

[2] AlGaN-GaN heterostructure FETs with offset gate design [J].

Gaska, R ;

Chen, Q ;

Yang, J ;

Khan, MA ;

Shur, MS ;

Ping, A ;

Adesida, I .

ELECTRONICS LETTERS, 1997, 33 (14) :1255-1257

[3] RESURF AlGaN/GaN HEMT for high voltage power switching [J].

Karmalkar, S ;

Deng, JY ;

Shur, MS ;

Gaska, R .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) :373-375

[4] High breakdown voltage AlGaN-GaN Power-HEMT design and high current density switching behavior [J].

Saito, W ;

Takada, Y ;

Kuraguchi, M ;

Tsuda, K ;

Omura, I ;

Ogura, T ;

Ohashi, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) :2528-2531

[5] 7.5kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates [J].

Simin, G ;

Hu, X ;

Ilinskaya, N ;

Kumar, A ;

Koudymov, A ;

Zhang, J ;

Khan, MA ;

Gaska, R ;

Shur, MS .

ELECTRONICS LETTERS, 2000, 36 (24) :2043-2044

[6] Electrical breakdown in atmospheric air between closely spaced (0.2 μm-40 μm) electrical contacts [J].

Slade, PG ;

Taylor, ED .

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2002, 25 (03) :390-396

[7] On-state breakdown in power HEMT's: Measurements and modeling [J].

Somerville, MH ;

Blanchard, R ;

del Alamo, JA ;

Duh, KG ;

Chao, PC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (06) :1087-1093

[8] Surface flashover effects in AlGaN/GaN HFETs [J].

Sudarshan, TS ;

Gradinaru, G ;

Yang, J ;

Khan, MA .

ELECTRONICS LETTERS, 1998, 34 (09) :927-928

[9] Direct measurement of gate depletion in high breakdown (405V) AlGaN/GaN heterostructure field effect transistors [J].

Vetury, R ;

Wu, YF ;

Fini, PT ;

Parish, G ;

Keller, S ;

DenBaars, SP ;

Mishra, UK .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :55-58

[10] High breakdown voltage AlGaN-GaNHEMTs achieved by multiple field plates [J].

Xing, HL ;

Dora, Y ;

Chini, A ;

Heikman, S ;

Keller, S ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (04) :161-163

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