Improved theory for remote-charge-scattering-limited mobility in metal-oxide-semiconductor transistors

被引：42

作者：

Saito, S ^{[1
]}

Torii, K ^{[1
]}

Hiratani, M ^{[1
]}

Onai, T ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 13期

关键词：

D O I：

10.1063/1.1510178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transport theory is extended to include the remote-charge-scattering-limited electron mobility of metal-oxide-semiconductor field-effect transistors. We evaluated remote-charge-scattering from the depletion charge in the polycrystalline silicon gate. We obtained an analytical expression for the scattering potential, by taking image charge, screening, and quantization effects into account. The potential increases with decreasing gate-oxide thickness, which results in a mobility degradation at lower vertical electric fields. The calculated mobility agrees well with recent measurements. (C) 2002 American Institute of Physics.

引用

收藏

页码：2391 / 2393

页数：3

相关论文

共 22 条

[1]

Alam M., 2001, Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No.01EX537), P30, DOI 10.1109/IWGI.2001.967542

[2] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[3] MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages [J].

Chen, K ;

Wann, HC ;

Dunster, J ;

Ko, PK ;

Hu, CM ;

Yoshida, M .

SOLID-STATE ELECTRONICS, 1996, 39 (10) :1515-1518

[4] Thin oxides with in situ native oxide removal [J].

Chin, A ;

Chen, WJ ;

Chang, T ;

Kao, RH ;

Lin, BC ;

Tsai, C ;

Huang, JCM .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) :417-419

[5] Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures [J].

Fischetti, MV .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1232-1250

[6] Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability [J].

Fischetti, MV ;

Laux, SE .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (02) :1205-1231

[7] Effective electron mobility reduced by remote charge scattering in high-κ gate stacks [J].

Hiratani, M ;

Saito, S ;

Shimamoto, Y ;

Torii, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (7A) :4521-4522

[8] Ensemble Monte Carlo/molecular dynamics simulation of gate remote charge effects in small geometry MOSFETs [J].

Kawashima, I ;

Kamakura, Y ;

Taniguchi, K .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :113-116

[9]

Krishnan M. S., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P241, DOI 10.1109/IEDM.1999.823888

[10] Remote charge scattering in MOSFETs with ultra-thin gate dielectrics [J].

Krishnan, MS ;

Yeo, YC ;

Lu, Q ;

King, TJ ;

Bokor, J ;

Hu, CM .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :571-574