High-Performance Quantum Dot Lasers and Integrated Optoelectronics on Si

This paper provides a review of the recent developments of self-organized In(Ga)As/Ga(Al)As quantum dot lasers grown directly on Si, as well as their on-chip integration with Si waveguides and quantum-well electroabsorption modulators. A novel dislocation reduction technique, with the incorporation of self-organized In(Ga,Al)As quantum dots as highly effective three-dimensional dislocation filters, has been developed to overcome issues associated with the material incompatibility between III-V materials and Si. With the use of this technique, quantum dot lasers grown directly on Si exhibit relatively low threshold Current (J(th) = 900 A/cm(2)) and very high temperature stability (T-o = 278 K). integrated quantum dot lasers and quantum-well electroabsorption modulators on Si have been achieved, with a coupling coefficient of more than 20% and a modulation depth of similar to 100% at a reverse bias of 5 V. The monolithic integration of quantum dot lasers with both amorphous and crystalline Si waveguides, fabricated using plasma-enhanced chemical-vapor deposition and membrane transfer, respectively, has also been demonstrated.