Second-harmonic generation in a doubly resonant semiconductor microcavity

被引:58
作者
Simonneau, C
Debray, JP
Harmand, JC
Vidakovic, P
Lovering, DJ
Levenson, JA
机构
[1] France Telecom., Ctr. Natl. d'Etud. Telecom./Paris B, Laboratoire de Bagneux, F-92225 Bagneux Cedex
关键词
D O I
10.1364/OL.22.001775
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrate second-harmonic generation in a doubly resonant semiconductor microcavity. The monolithic cavity consists of an AlGaAs active medium sandwiched between two AlGaAs/AlAs dual-wavelength mirrors. The mirrors do not have any apparent periodicity because, unlike single-or dual-wavelength Bragg reflectors, they are engineered with dispersion taken into account. Quasi-phase matching is obtained by addition of the appropriate phases at reflection so as to compensate for the dephasing between the fundamental and the second-harmonic fields. (C) 1997 Optical Society of America.
引用
收藏
页码:1775 / 1777
页数:3
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