Circularly polarized lasing in a (110)-oriented quantum well vertical-cavity surface-emitting laser under optical spin injection

被引：52

作者：

Fujino, Hiroshi ^{[1
]}

Koh, Shinji ^{[1
]}

Iba, Satoshi ^{[1
]}

Fujimoto, Toshiyasu ^{[1
]}

Kawaguchi, Hitoshi ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 13期

基金：

日本学术振兴会;

关键词：

gallium arsenide; III-V semiconductors; indium compounds; paramagnetic resonance; quantum well lasers; surface emitting lasers; RELAXATION; GAAS(110);

D O I：

10.1063/1.3112576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated and characterized a vertical-cavity surface-emitting laser (VCSEL) based on (110) InGaAs/GaAs multiple quantum wells (MQWs). Circularly polarized lasing in the (110) VCSEL by optical injection of spin-polarized electrons has been demonstrated at 77 K and room temperature. A high degree of circular polarization, 0.94, was observed at 77 K, reflecting the long electron spin relaxation time in the (110) MQWs.

引用

页数：3

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