Photovoltaic study of ZnSe/GaAs heterostructures

被引:2
作者
Wang, JB [1 ]
Chen, DY [1 ]
Jin, CX [1 ]
Lu, F [1 ]
Sun, HH [1 ]
Wang, X [1 ]
机构
[1] FUDAN UNIV,TD LEE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 03期
关键词
D O I
10.1103/PhysRevB.56.1416
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The ZnSe/GaAs heterojunctions formed by epitaxially grown ZnSe thin films on S-treated GaAs substrates are characterized by the photovoltaic measurements. By analyzing the photovoltaic spectra obtained at different temperatures, the broad-band photovoltaic signal is assigned to the cross-band photon-absorption transitions between the valence band of GaAs and the conduction band of ZnSe near the heterointerface. The band alignment of the ZnSe/S-GaAs heterojunction is determined to be of a type-II configuration with a conduction-band offset of 168 meV at room temperature.
引用
收藏
页码:1416 / 1421
页数:6
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