Rod-like β-FeSi2 phase grown on Si(111) substrate

被引：10

作者：

Han, M ^{[1
]}

Tanaka, M ^{[1
]}

Takeguchi, M ^{[1
]}

Furuya, K ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050003, Japan

来源：

THIN SOLID FILMS | 2004年 / 461卷 / 01期

关键词：

morphology; reactive deposition epitaxy; semiconducting silicon compounds; phase transformation;

D O I：

10.1016/j.tsf.2004.02.087

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pure Fe with coverage of 0.5-2.0 nm was deposited on Si (111) 7x7 surfaces by reactive deposition epitaxy (RDE) in an integrated ultrahigh vacuum (UHV) system. Transmission electron microscopy (TEM) confirmed that the as-deposited epitaxial phase exhibits rod-like and equilateral triangular morphology. The as-deposited phase was identified as c-FeSi2 by electron diffraction and high-resolution transmission electron microscopy. It was found that there exists lattice distortion in epitaxial c-FeSi2 Phase. Upon annealing at 1073 K, the metastable c-FeSi2 transforms into equilibrium beta-FeSi2 phase, the latter inherits completely the morphology of c-FeSi2 phase. Based on RDE and subsequent annealing, a new fabrication technique to grow rod-like semiconducting beta-FeSi2 on a Si substrate has been proposed in the present work. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：136 / 140

页数：5

共 19 条

[1] MICROLITHOGRAPHY BY USING NEUTRAL METASTABLE ATOMS AND SELF-ASSEMBLED MONOLAYERS [J].