Morphology of perylene thin films on SiOx/Si(100) and SiO2/Si(100): A spectroscopic and microscopic study of the influence of the preparation parameters

被引：10

作者：

Casu, M. B. ^{[1
,2
]}

Yu, X. ^{[2
]}

Schmitt, S. ^{[2
]}

Heske, C. ^{[2
,3
]}

Umbach, E. ^{[2
,4
]}

机构：

[1] Univ Tubingen, Inst Phys & Theoret Chem, D-72076 Tubingen, Germany

[2] Univ Wurzburg, D-97074 Wurzburg, Germany

[3] Univ Nevada, Dept Chem, Las Vegas, NV 89154 USA

[4] FZ Karlsruhe, D-76344 Eggenstein Leopoldshafen, Germany

来源：

CHEMICAL PHYSICS LETTERS | 2009年 / 479卷 / 1-3期

关键词：

FIELD-EFFECT TRANSISTORS; VOLTAGE ORGANIC TRANSISTORS; SINGLE-CRYSTALS; GROWTH; SEMICONDUCTOR; INSULATORS; DEPOSITION; MOBILITY;

D O I：

10.1016/j.cplett.2009.08.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of perylene on SiOx/Si(1 0 0) and SiO2/Si(1 0 0) substrates have been studied by X-ray photoelectron spectroscopy and atomic force microscopy. These investigations reveal that structure, morphology, and growth modes depend on the preparation parameters. By varying the deposition rate between 0.8 and 16 nm/min, a transition from island growth mode, with large and isolated crystallites, to a homogeneous film growth is observable. We can predict the growth of perylene on technologically relevant substrates: homogeneous smooth films at lower substrate temperature (below 200 K) and single grains, enough for single nanodevices, when the film is grown at higher substrate temperature. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：76 / 80

页数：5

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