Phonon renormalization in doped bilayer graphene

被引：254

作者：

Das, A. ^{[1
]}

Chakraborty, B. ^{[1
]}

Piscanec, S. ^{[2
]}

Pisana, S. ^{[2
]}

Sood, A. K. ^{[1
]}

Ferrari, A. C. ^{[2
]}

机构：

[1] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[2] Univ Cambridge, Dept Engn, Cambridge CB3 0FA, England

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 15期

基金：

欧洲研究理事会;

关键词：

conduction bands; doping; graphene; phonons; Raman spectra; valence bands; RAMAN-SPECTROSCOPY; BAND-STRUCTURE; ELECTRON; GRAPHITE; SCATTERING;

D O I：

10.1103/PhysRevB.79.155417

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report phonon renormalization in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping as a result of the nonadiabatic Kohn anomaly at the Gamma point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This gives a change of slope in the variation of G peak position with doping which allows a direct measurement of the interlayer coupling strength.

引用

页数：7

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