Single-mode operation over a wide temperature range in 1.3 mu m InGaAsP/InP distributed feedback lasers

被引:28
作者
Lu, H [1 ]
Blaauw, C [1 ]
Makino, T [1 ]
机构
[1] BELL NO RES LTD,OTTAWA,ON K1Y 4H7,CANADA
关键词
D O I
10.1109/50.495167
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An approach for single mode operation of 1.3 mu m distributed feedback (DFB) lasers with a large side mode suppression ratio over a wide temperature range of -40 degrees C to 100 degrees C is reported. The lasers utilize an optimized strained-layer multiquantum well (MQW) active region in combination with index/gain-coupling and detuning effect, A high characteristic temperature T-o (90-100 K) was obtained in 13 mu m InGaAsP/InP strained-layer MQW Fabry-Perot lasers when the number of QW's exceeded 10. In gain-coupled DFB lasers, a very low temperature dependence of the threshold current has been obtained when there is no detuning or positive detuning of the lasing wavelength at room temperature with respect to the material gain peak. An infinite T-o can be realized over certain temperature ranges, in which the threshold current exhibits a minimum, depending on the amount of detuning. The physical mechanism responsible for the appearance of this minimum, as well as the high side mode suppression ratio; are explained theoretically.
引用
收藏
页码:851 / 859
页数:9
相关论文
共 44 条
[1]   BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].
ADAMS, AR .
ELECTRONICS LETTERS, 1986, 22 (05) :249-250
[2]  
AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, P162
[3]   TEMPERATURE-DEPENDENCE OF LASING CHARACTERISTICS OF INGAASP/INP DISTRIBUTED FEEDBACK LASERS IN 1.5 MU-M RANGE [J].
AKIBA, S ;
UTAKA, K ;
SAKAI, K ;
MATSUSHIMA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (12) :1736-1740
[4]   1.5-MU-M LAMBDA/4-SHIFTED INGAASP INP DFB LASERS [J].
AKIBA, S ;
USAMI, M ;
UTAKA, K .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (11) :1564-1573
[5]   EFFECT OF THERMIONIC ELECTRON-EMISSION FROM THE ACTIVE LAYER ON THE INTERNAL QUANTUM EFFICIENCY OF INGAASP LASERS OPERATING AT 1.3 MU-M [J].
ANDREKSON, PA ;
KAZARINOV, RF ;
OLSSON, NA ;
TANBUNEK, T ;
LOGAN, RA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) :219-221
[6]   GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS [J].
ASADA, M ;
KAMEYAMA, A ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) :745-753
[7]   HIGH-SPEED SEMICONDUCTOR-LASER DESIGN AND PERFORMANCE [J].
BOWERS, JE .
SOLID-STATE ELECTRONICS, 1987, 30 (01) :1-11
[8]   AUGER RECOMBINATION RATES IN COMPRESSIVELY STRAINED INXGA1-XAS/INGAASP/INP (0.53-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.73) MULTIQUANTUM WELL LASERS [J].
DAVIS, L ;
LAM, Y ;
NICHOLS, D ;
SINGH, J ;
BHATTACHARYA, PK .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (02) :120-122
[9]   STRAIN-INDUCED PERFORMANCE IMPROVEMENTS IN LONG-WAVELENGTH, MULTIPLE-QUANTUM-WELL, RIDGE-WAVE-GUIDE LASERS WITH ALL QUATERNARY ACTIVE REGIONS [J].
EVANS, JD ;
MAKINO, T ;
PUETZ, N ;
SIMMONS, JG ;
THOMSPON, DA .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (04) :299-301
[10]   INTERVALENCE BAND ABSORPTION IN STRAINED AND UNSTRAINED INGAAS MULTIPLE QUANTUM-WELL STRUCTURES [J].
FUCHS, G ;
HORER, J ;
HANGLEITER, A ;
HARLE, V ;
SCHOLZ, F ;
GLEW, RW ;
GOLDSTEIN, L .
APPLIED PHYSICS LETTERS, 1992, 60 (02) :231-233