Electron-beam engineering of single-walled carbon nanotubes from bilayer graphene

被引:27
作者
Algara-Siller, Gerardo [1 ,2 ]
Santana, Adriano [3 ]
Onions, Rosalind [3 ]
Suyetin, Mikhail [3 ]
Biskupek, Johannes [1 ]
Bichoutskaia, Elena [3 ]
Kaiser, Ute [1 ]
机构
[1] Univ Ulm, Grp Electron Microscopy Mat Sci, Cent Facil Electron Microscopy, D-89081 Ulm, Germany
[2] Tech Univ Ilmenau, Dept Chem, D-98683 Ilmenau, Germany
[3] Univ Nottingham, Sch Chem, Nottingham NG7 2RD, England
基金
英国工程与自然科学研究理事会;
关键词
FABRICATION; FIELD;
D O I
10.1016/j.carbon.2013.07.107
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070305 [高分子化学与物理];
摘要
Bilayer graphene nanoribbons (BGNRs) with a predefined width have been produced directly from bilayer graphene using a transmission electron microscope (TEM) in scanning mode operated at 300 kV. The BGNRs have been subsequently imaged in high-resolution TEM mode at 80 kV. During imaging, the interaction of the electrons with the sample induces structural transformations in the BGNR, such as closure of the edges and thinning, leading to the formation of a single-walled carbon nanotube (SWCNT). We demonstrate using molecular dynamics simulations that the produced SWCNT is, in fact, a flattened SWCNT with elliptical circumference. Density functional theory calculations show that the band gap of the flattened semiconducting SWCNTs is significantly smaller than that of the undeformed semiconducting SWCNTs, and this effect is particularly profound in narrow SWCNTs. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:80 / 86
页数:7
相关论文
共 60 条
[1]
[Anonymous], 2012, DISC STUD MOD ENV RE
[2]
Irradiation effects in carbon nanostructures [J].
Banhart, F .
REPORTS ON PROGRESS IN PHYSICS, 1999, 62 (08) :1181-1221
[3]
Making graphene visible [J].
Blake, P. ;
Hill, E. W. ;
Castro Neto, A. H. ;
Novoselov, K. S. ;
Jiang, D. ;
Yang, R. ;
Booth, T. J. ;
Geim, A. K. .
APPLIED PHYSICS LETTERS, 2007, 91 (06)
[4]
EMPIRICAL POTENTIAL FOR HYDROCARBONS FOR USE IN SIMULATING THE CHEMICAL VAPOR-DEPOSITION OF DIAMOND FILMS [J].
BRENNER, DW .
PHYSICAL REVIEW B, 1990, 42 (15) :9458-9471
[5]
Atomically precise bottom-up fabrication of graphene nanoribbons [J].
Cai, Jinming ;
Ruffieux, Pascal ;
Jaafar, Rached ;
Bieri, Marco ;
Braun, Thomas ;
Blankenburg, Stephan ;
Muoth, Matthias ;
Seitsonen, Ari P. ;
Saleh, Moussa ;
Feng, Xinliang ;
Muellen, Klaus ;
Fasel, Roman .
NATURE, 2010, 466 (7305) :470-473
[6]
Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect [J].
Castro, Eduardo V. ;
Novoselov, K. S. ;
Morozov, S. V. ;
Peres, N. M. R. ;
Dos Santos, J. M. B. Lopes ;
Nilsson, Johan ;
Guinea, F. ;
Geim, A. K. ;
Castro Neto, A. H. .
PHYSICAL REVIEW LETTERS, 2007, 99 (21)
[7]
Charlier JC, 1997, SCIENCE, V275, P646, DOI 10.1126/science.275.5300.647
[8]
Defect Scattering in Graphene [J].
Chen, Jian-Hao ;
Cullen, W. G. ;
Jang, C. ;
Fuhrer, M. S. ;
Williams, E. D. .
PHYSICAL REVIEW LETTERS, 2009, 102 (23)
[9]
Graphene nano-ribbon electronics [J].
Chen, Zhihong ;
Lin, Yu-Ming ;
Rooks, Michael J. ;
Avouris, Phaedon .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 40 (02) :228-232
[10]
Reversible fluorination of graphene: Evidence of a two-dimensional wide bandgap semiconductor [J].
Cheng, S. -H. ;
Zou, K. ;
Okino, F. ;
Gutierrez, H. R. ;
Gupta, A. ;
Shen, N. ;
Eklund, P. C. ;
Sofo, J. O. ;
Zhu, J. .
PHYSICAL REVIEW B, 2010, 81 (20)