Valence band offset of ZnO/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

被引：11

作者：

Jia, C. H. ^{[1
]}

Chen, Y. H. ^{[1
]}

Zhou, X. L. ^{[1
]}

Yang, A. L. ^{[1
]}

Zheng, G. L. ^{[1
]}

Liu, X. L. ^{[1
]}

Yang, S. Y. ^{[1
]}

Wang, Z. G. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2009年 / 42卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1088/0022-3727/42/9/095305

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the ZnO/SrTiO3 heterojunction. It is found that a type-II band alignment forms at the interface. The VBO and conduction band offset (CBO) are determined to be 0.62 +/- 0.23 and 0.79 +/- 0.23 eV, respectively. The directly obtained VBO value is in good agreement with the result of theoretical calculations based on the interface-induced gap states and the chemical electronegativity theory. Furthermore, the CBO value is also consistent with the electrical transport investigations.

引用

页数：5

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