In-situ Rutherford backscattering design for early SIMOX-SOI metallic screening

被引：1

作者：

Allen, LP ^{[1
]}

Farley, M ^{[1
]}

Purser, KH ^{[1
]}

Ryding, G ^{[1
]}

Smick, TH ^{[1
]}

机构：

[1] SO CROSS CORP, DANVERS, MA 01923 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 118卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0168-583X(95)01206-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Design and implementation is described of an in-situ, real-time Rutherford backscattering spectroscopy system for SIMOX-SOI impurity monitoring during SIMOX-SOI processing. The prototype instrument utilized an existing high-current, 65 keV oxygen beam as the primary source together with a spherical electrostatic analyzer for detecting the backscattered ions. Distinct elemental edges were found at predicted spherical analyzer voltages for pure metal samples of Mo, W, Cu and Au. Thickness and concentration measurements on thin samples of stainless steel of Ta, Mo, Cr, and Cu were also performed. The concentration of the layers with respect to the silicon substrate were precisely calculated by comparing the measured signal strength to the theoretical value. There are plans to incorporate such detection systems onto a SIMOX-SOI production implanters in the near future.

引用

页码：782 / 786

页数：5

共 9 条

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[2]

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[3]

Chu W., 1978, BACKSCATTERING SPECT, DOI DOI 10.1016/B978-0-12-173850-1.50008-9

[4]

DOYLE BL, 1991, Patent No. 5059785