Spin injection across a hybrid heterojunction: Theoretical understanding and experimental approach (invited)

被引:16
作者
Hu, CM
Nitta, J
Jensen, A
Hansen, JB
Takayanagi, H
Matsuyama, T
Heitmann, D
Merkt, U
机构
[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany
[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany
[3] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
[4] Tech Univ Denmark, Dept Phys, DK-2800 Lyngby, Denmark
关键词
D O I
10.1063/1.1447282
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spin injection across a hybrid ferromagnet/semiconductor junction has proven to be difficult, unlike in an all-metal junction used in giant magnetoresistance devices. The difference responsible is highlighted in a simple model. We perform spin-injection-detection experiments on devices with two ferromagnetic contacts on a two-dimensional electron gas confined in an InAs quantum well. We demonstrate that spin injection allows the hybrid device to combine both the advantage of the ferromagnet as well as that of the semiconductor. (C) 2002 American Institute of Physics.
引用
收藏
页码:7251 / 7255
页数:5
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