Mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell

被引：169

作者：

Jeong, Doo Seok ^{[1
,1
]}

Schroeder, Herbert

Waser, Rainer

机构：

[1] Korea Inst Sci & Technol, Thin Film Mat Res Ctr, Seoul 136791, South Korea

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 19期

关键词：

cells (electric); electrochemistry; platinum; Schottky barriers; solid electrolytes; switching; titanium compounds; vacancies (crystal); OXYGEN; RESISTANCE; SRTIO3;

D O I：

10.1103/PhysRevB.79.195317

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We suggest a possible mechanism for bipolar switching in a Pt/TiO2/Pt resistive switching cell in terms of electrochemical reactions involving oxygen ions/vacancies. The electrochemical reactions are considered to take place at an interface between Pt and TiO2 solid electrolyte, and they modulate the Schottky barrier height at the interface. Calculation results using this proposed mechanism can explain a bipolar switching behavior and semiquantitatively describe experimental data.

引用

收藏

页数：10

相关论文

共 23 条

[1] ELECTRICAL-CONDUCTIVITY IN NON-STOICHIOMETRIC TITANIUM-DIOXIDE AT ELEVATED-TEMPERATURES [J].

BALACHANDRAN, U ;

EROR, NG .

JOURNAL OF MATERIALS SCIENCE, 1988, 23 (08) :2676-2682

[2] Thermionic electron emission and adsorption Part I. Thermionic emission [J].

Becker, JA .

REVIEWS OF MODERN PHYSICS, 1935, 7 (02) :0095-0128

[3] Electric-field penetration into metals: Consequences for high-dielectric-constant capacitors [J].

Black, CT ;

Welser, JJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (04) :776-780

[4] First-principles study of point defects in rutile TiO2-x [J].

Cho, Eunae ;

Han, Seungwu ;

Ahn, Hyo-Shin ;

Lee, Kwang-Ryeol ;

Kim, Seong Keun ;

Hwang, Cheol Seong .

PHYSICAL REVIEW B, 2006, 73 (19)

[5] RECOMBINATION VELOCITY EFFECTS ON CURRENT DIFFUSION AND IMREF IN SCHOTTKY BARRIERS [J].

CROWELL, CR ;

BEGUWALA, M .

SOLID-STATE ELECTRONICS, 1971, 14 (11) :1149-&

[6]

Hamann C.H., 2007, Electrochemistry

[7]

Henrich V. E., 1994, SURFACE SCI METAL OX

[8] Role of oxygen vacancies in Cr-doped SrTiO3 for resistance-change memory [J].

Janousch, Markus ;

Meijer, G. Ingmar ;

Staub, Urs ;

Delley, Bernard ;

Karg, Siegfried F. ;

Andreasson, Bjorn P. .

ADVANCED MATERIALS, 2007, 19 (17) :2232-+

[9] First-principles modeling of resistance switching in perovskite oxide material [J].

Jeon, Sang Ho ;

Park, Bae Ho ;

Lee, Jaichan ;

Lee, Bora ;

Han, Seungwu .

APPLIED PHYSICS LETTERS, 2006, 89 (04)

[10] Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2/Pt stack [J].

Jeong, Doo Seok ;

Schroeder, Herbert ;

Waser, Rainer .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (08) :G51-G53