UV (h nu=8.43 eV) photoelectron spectroscopy of porous silicon near Fermi level

被引：9

作者：

Aprelev, AM ^{[1
]}

Lisachenko, AA ^{[1
]}

Laiho, R ^{[1
]}

Pavlov, A ^{[1
]}

Pavlova, Y ^{[1
]}

机构：

[1] UNIV TURKU, WIHURI PHYS LAB, FIN-20014 TURKU, FINLAND

来源：

THIN SOLID FILMS | 1997年 / 297卷 / 1-2期

基金：

芬兰科学院;

关键词：

photoelectron spectroscopy; porous silicon; photoluminescence;

D O I：

10.1016/S0040-6090(96)09481-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electronic spectra of porous Si have been investigated in the region <4 eV below the Fermi level with specimens subjected to in-situ oxygenation and thermal treatments. The measurements were made with a UHV photoelectron spectrometer using ''soft'' energy (hv = 8.43 eV) excitation of the photoemission. The significance of the density of occupied states to the photoluminescence and its degradation in porous Si is discussed. Fine structure of the photoelectron spectra is found from specimens heated in oxygen at 600 K. (C) 1997 Elsevier Science S.A.

引用

页码：142 / 144

页数：3

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