Analysis of ZnO and ZnMgO nanopillars grown by self-organization

被引:60
作者
Kling, R [1 ]
Kirchner, C
Gruber, T
Reuss, F
Waag, A
机构
[1] Univ Ulm, Dept Semicond Phys, D-89081 Ulm, Germany
[2] Braunschweig Tech Univ, Inst Semicond Technol, D-38106 Braunschweig, Germany
关键词
D O I
10.1088/0957-4484/15/8/032
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this contribution we analyse the structural and optical properties of ZnO as well as ZnMgO nanopillars grown catalyst-free by metalorganic vapour-phase epitaxy. The nanostructures were grown directly onto different substrate materials with various orientations. The nanopillars deposited on a-plane sapphire show the best vertical c-axis alignment and have a typical diameter of about 50 nm and a height of several micrometres, depending on growth time. We achieved well ordered, almost completely c-axis oriented pillars, as confirmed by scanning electron microscopy and high resolution x-ray diffraction. Photoluminescence measurements revealed very narrow donor-bound exciton emission lines with half widths as small as 0.5 meV. In order to investigate the possibility of a combination of band gap engineering and nanopillar growth, ZnMgO nanopillars were also grown. The Mg incorporation was confirmed by photoluminescence measurements and a blue shift of the band gap of up to 170 meV could be achieved for the nanopillars with the highest Mg concentration.
引用
收藏
页码:1043 / 1046
页数:4
相关论文
共 18 条
  • [1] GORDON RG, 1997, AIP C P, V394, P39
  • [2] HELLWEGE KH, 1975, LANDOLTBORNSTEIN, V7, P340
  • [3] Site-specific growth of Zno nanorods using catalysis-driven molecular-beam epitaxy
    Heo, YW
    Varadarajan, V
    Kaufman, M
    Kim, K
    Norton, DP
    Ren, F
    Fleming, PH
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (16) : 3046 - 3048
  • [4] Room-temperature ultraviolet nanowire nanolasers
    Huang, MH
    Mao, S
    Feick, H
    Yan, HQ
    Wu, YY
    Kind, H
    Weber, E
    Russo, R
    Yang, PD
    [J]. SCIENCE, 2001, 292 (5523) : 1897 - 1899
  • [5] KIOKE J, 1993, JPN J APPL PHYS PT 1, V32, P2337
  • [6] Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties
    Li, Y
    Meng, GW
    Zhang, LD
    Phillipp, F
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (15) : 2011 - 2013
  • [7] The path to ZnO devices: donor and acceptor dynamics
    Look, DC
    Jones, RL
    Sizelove, JR
    Garces, NY
    Giles, NC
    Halliburton, LE
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 195 (01): : 171 - 177
  • [8] ZNO-THIN FILM CHEMICAL SENSORS
    MULLER, J
    WEISSENRIEDER, S
    [J]. FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY, 1994, 349 (05): : 380 - 384
  • [9] Double heterostructure based on ZnO and MgxZn1-xO
    Ohtomo, A
    Kawasaki, M
    Koida, T
    Koinuma, H
    Sakurai, Y
    Yoshida, Y
    Sumiya, M
    Fuke, S
    Yasuda, T
    Segawa, Y
    [J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1463 - 1466
  • [10] MgxZn1-xO as a II-VI widegap semiconductor alloy
    Ohtomo, A
    Kawasaki, M
    Koida, T
    Masubuchi, K
    Koinuma, H
    Sakurai, Y
    Yoshida, Y
    Yasuda, T
    Segawa, Y
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (19) : 2466 - 2468