Barrierless formation and faceting of SiGe islands on Si(001) -: art. no. 196104

被引：146

作者：

Tersoff, J ^{[1
]}

Spencer, BJ

Rastelli, A

von Känel, H

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] SUNY Buffalo, Dept Math, Buffalo, NY 14260 USA

[3] Univ Pavia, Dipartimento Fis A Volta, INFM, I-27100 Pavia, Italy

[4] Politecn Milan, Dipartimento Fis, INFM, I-20133 Milan, Italy

[5] Swiss Fed Inst Technol, Festkorperphys Lab, CH-8093 Zurich, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.89.196104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The initial stages of the formation of SiGe islands on Si(001) pose a long-standing puzzle. We show that the behavior can be consistently explained by one simple assumption-that for strained SiGe, (001) is a stable orientation but not a facet orientation. Calculations of energy and morphology reproduce the key features of "prepyramid" and "pyramid" islands, and explain the initial formation and subsequent shape transition. Scanning tunneling microscopy measurements confirm the key assumptions and predictions of the model.

引用

页数：4

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