Crystal tilting in GaN grown by pendoepitaxy method on sapphire substrate

被引：49

作者：

Kim, IH ^{[1
]}

Sone, C ^{[1
]}

Nam, OH ^{[1
]}

Park, YJ ^{[1
]}

Kim, T ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 26期

关键词：

D O I：

10.1063/1.125552

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pendeoepitaxy of GaN on sapphire substrate with SiO2 mask is demonstrated and characterized by transmission electron microscopy and double crystal x-ray diffraction. A continuous layer of GaN with low dislocation density was achieved by this method. Parts of the GaN layer are tilted symmetrically toward [11-20] direction and have two kinds of coalesce and tilt boundaries. Each boundary was formed by a vertical array of piled up dislocations with the Burger's vector of [11-20]. The tilting mechanism in pendeo-epitaxy is discussed in terms of surface interaction between the SiO2 mask and ELO-GaN. (C) 1999 American Institute of Physics. [S0003-6951(99)04552-0].

引用

页码：4109 / 4111

页数：3

共 10 条

[1]

GEHRKE T, 1999, MRS INTERNET J SEMIC

[2] Anisotropic epitaxial lateral growth in GaN selective area epitaxy [J].

Kapolnek, D ;

Keller, S ;

Vetury, R ;

Underwood, RD ;

Kozodoy, P ;

Baars, SPD ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1204-1206

[3]

Koike M, 1996, APPL PHYS LETT, V68, P1403, DOI 10.1063/1.116094

[4] High-power, long-lifetime InGaN/GaN/AlGaN-based laser diodes grown on pure GaN substrates [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3B) :L309-L312

[5] InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

APPLIED PHYSICS LETTERS, 1998, 72 (02) :211-213

[6] Violet InGaN/GaN/AIGaN-based laser diodes operable at 50°C with a fundamental transverse mode [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Mukai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (3A) :L226-L229

[7] CRYSTALLINE-STRUCTURE OF ALGAN EPITAXY ON SAPPHIRE USING ALN BUFFER LAYERS [J].

PONCE, FA ;

MAJOR, JS ;

PLANO, WE ;

WELCH, DF .

APPLIED PHYSICS LETTERS, 1994, 65 (18) :2302-2304

[8] Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth [J].

Sakai, A ;

Sunakawa, H ;

Usui, A .

APPLIED PHYSICS LETTERS, 1998, 73 (04) :481-483

[9] Defect structure in selectively grown GaN films with low threading dislocation density [J].

Sakai, A ;

Sunakawa, H ;

Usui, A .

APPLIED PHYSICS LETTERS, 1997, 71 (16) :2259-2261

[10]

ZHELEVA TS, 1998, MRS FALL M BOST

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