Influence of temperature and illumination on surface barrier of individual ZnO nanowires

被引：15

作者：

Liao, Zhi-Min ^{[1
]}

Hou, Chong ^{[1
]}

Zhou, Yang-Bo ^{[1
]}

Xu, Jun ^{[2
]}

Zhang, Jing-Min ^{[2
]}

Yu, Da-Peng ^{[1
,2
]}

机构：

[1] Peking Univ, State Key Lab Mesoscop Phys, Dept Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Electron Microscopy Lab, Sch Phys, Beijing 100871, Peoples R China

来源：

JOURNAL OF CHEMICAL PHYSICS | 2009年 / 130卷 / 08期

关键词：

II-VI semiconductors; nanowires; photoconductivity; Schottky barriers; surface conductivity; wide band gap semiconductors; zinc compounds; FIELD-EFFECT TRANSISTOR; PHOTOLUMINESCENCE;

D O I：

10.1063/1.3081183

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The current-voltage (I-V) characteristics of single ZnO nanowires were measured varying with temperature and illumination. A model of the ZnO nanowire sandwiched by back-to-back diodes was utilized to explain the experimental data. Simulations of the I-V curves exhibited that the surface barrier height was independent of temperature from 180 to 290 K. This work also shows that the larger the incident laser power is, the smaller the contact surface barrier height will be. The photon induced reduction in the surface barrier height is attributed to the photogenerated holes, which result in a shielding effect on the surface trapped electrons.

引用

页数：4

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