Properties of isotype n-ZnO/n-GaN heterostructures studied by I-V-T and electron beam induced current methods

被引：16

作者：

Alivov, Ya I. ^{[1
]}

Xiao, B. ^{[1
]}

Akarca-Biyikli, S. ^{[1
]}

Fan, Q. ^{[1
]}

Morkoc, H. ^{[1
]}

Johnstone, D. ^{[2
]}

Lopatiuk-Tirpak, O. ^{[3
]}

Chernyak, L. ^{[3
]}

Litton, W. ^{[4
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

[2] SEMETROL, Chesterfield, VA 23838 USA

[3] Univ Cent Florida, Dept Phys, Orlando, FL 32816 USA

[4] AFRL, MLPS, Wright Patterson AFB, OH 45433 USA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2008年 / 20卷 / 08期

关键词：

D O I：

10.1088/0953-8984/20/8/085201

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electrical properties of isotype n-ZnO/n-GaN heterostructures obtained by radio-frequency sputtering of ZnO films on GaN layers are studied by means of temperature dependent current-voltage (I-V-T) characterization and electron beam induced current (EBIC) measurements. The n-ZnO/n-GaN diodes showed highly rectifying behavior with a forward and reverse current ratio of about 10(6) at +/- 5 V. From the analysis of I-V-T measurements, a conduction band offset of similar to 0.62 eV was derived. From EBIC measurements, the minority carrier diffusion length of ZnO was estimated to lie in the range 0.125-0.175 mu m, while an activation energy was derived as 0.462 +/- 0.073 V and was attributed to the traps.

引用

页数：4

共 25 条

[1] Band offset measurements of ZnO/6H-SiC heterostructure system [J].

Alivov, Ya. I. ;

Xiao, B. ;

Fan, Q. ;

Morkoc, H. ;

Johnstone, D. .

APPLIED PHYSICS LETTERS, 2006, 89 (15)

[2] Forward-current electroluminescence from GaN/ZnO double heterostructure diode [J].

Alivov, YI ;

Özgür, Ü ;

Dogan, S ;

Liu, C ;

Moon, Y ;

Gu, X ;

Avrutin, V ;

Fu, Y ;

Morkoç, H .

SOLID-STATE ELECTRONICS, 2005, 49 (10) :1693-1696

[3] Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates [J].

Alivov, YI ;

Kalinina, EV ;

Cherenkov, AE ;

Look, DC ;

Ataev, BM ;

Omaev, AK ;

Chukichev, MV ;

Bagnall, DM .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4719-4721

[4] Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes [J].

Alivov, YI ;

Van Nostrand, JE ;

Look, DC ;

Chukichev, MV ;

Ataev, BM .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2943-2945

[5] Electron injection-induced effects in Mn-doped GaN [J].

Burdett, W ;

Lopatiuk, O ;

Chernyak, L ;

Hermann, M ;

Stutzmann, M ;

Eickhoff, M .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (06) :3556-3558

[6] Cathodoluminescence studies of the electron injection-induced effects in GaN [J].

Chernyak, L ;

Burdett, W ;

Klimov, M ;

Osinsky, A .

APPLIED PHYSICS LETTERS, 2003, 82 (21) :3680-3682

[7] Minority carrier transport in GaN and related materials [J].

Chernyak, L ;

Osinsky, A ;

Schulte, A .

SOLID-STATE ELECTRONICS, 2001, 45 (09) :1687-1702

[8] ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique [J].

Chuang, Ricky W. ;

Wu, Rong-Xun ;

Lai, Li-Wen ;

Lee, Ching-Ting .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[9] ZnO epilayers on GaN templates: Polarity control and valence-band offset [J].

Hong, SK ;

Hanada, T ;

Makino, H ;

Ko, HJ ;

Chen, YF ;

Yao, T ;

Tanaka, A ;

Sasaki, H ;

Sato, S ;

Imai, D ;

Araki, K ;

Shinohara, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04) :1429-1433

[10] ZnO-GaN tunnel junction for transparent ohmic contacts to p-GaN [J].

Kaminska, E ;

Piotrowska, A ;

Golaszewska, K ;

Kruszka, R ;

Kuchuk, A ;

Szade, J ;

Winiarski, A ;

Jasinski, J ;

Liliental-Weber, Z .

JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 371 (1-2) :129-132

← 1 2 3 →