Effect of current crowding on vacancy diffusion and void formation in electromigration

被引:132
作者
Tu, KN [1 ]
Yeh, CC [1 ]
Liu, CY [1 ]
Chen, C [1 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
关键词
D O I
10.1063/1.125915
中图分类号
O59 [应用物理学];
学科分类号
摘要
In multilevel interconnects, current crowding occurs whenever the current changes direction, such as when passing through a via. We propose that in current crowding, the current-density gradient can exert a driving force strong enough to cause excess vacancies (point defects) to migrate from high to low current-density regions. This leads to void formation in the latter. This is a key feature of electromigration-induced damage in very large scale integrated interconnects. (C) 2000 American Institute of Physics. [S0003-6951(00)01908-2].
引用
收藏
页码:988 / 990
页数:3
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