CMOS pixel sensor response to low energy electrons in transmission electron microscopy

被引：10

作者：

Battaglia, Marco ^{[1
,2
]}

Contarato, Devis ^{[1
]}

Denes, Peter ^{[1
]}

Doering, Dionisio ^{[1
]}

Radmilovic, Velimir ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2009年 / 605卷 / 03期

关键词：

Monolithic active pixel sensor; Transmission electron microscopy; SIMULATION; ILC;

D O I：

10.1016/j.nima.2009.03.249

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This letter presents the results of a study of the response of a test CMOS sensor with a radiation tolerant pixel cell design to 80 and 100 keV electrons. The point spread function is measured to be (13.0 +/- 1.7) gm at 100 keV and (12.1 +/- 1.6) mu m at 80 keV, for 20 mu m pixels. Results agree well with values predicted by a Geant-4 and dedicated charge collection simulation. Published by Elsevier B.V.

引用

页码：350 / 352

页数：3

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