Nanoimprint Lithography Materials Development for Semiconductor Device Fabrication

被引：112

作者：

Costner, Elizabeth A. ^{[1
]}

Lin, Michael W. ^{[1
]}

Jen, Wei-Lun ^{[1
]}

Willson, C. Grant ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Chem Engn, Austin, TX 78705 USA

来源：

ANNUAL REVIEW OF MATERIALS RESEARCH | 2009年 / 39卷

基金：

美国国家科学基金会;

关键词：

nanofabrication; next-generation lithography; dual damascene; imprint template; S-FIL/R; FLASH IMPRINT LITHOGRAPHY; DIAMOND-LIKE CARBON; THERMAL NANOIMPRINT; SOFT LITHOGRAPHY; MOLECULAR-WEIGHT; CROSS-LINKERS; STEP; POLYMERS; PATTERN; DEFORMATION;

D O I：

10.1146/annurev-matsci-082908-145336

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The term nanoimprint lithographs, (NIL) describes a number of processes used to form nanoscale structures by molding or embossing. Step and flash imprint lithography (S-FIL, a trademark of Molecular Imprints, Inc.) is a variant of NIL that can be performed at room temperature and low pressure. In S-FIL, a low-viscosity liquid imprint material is hardened in a patterned template by exposure to UV light. S-FIL is ideally suited to integrated-circuit device fabrication. Materials development for S-FIL has progressed significantly since its introduction in 1999. We discuss the status of material development, with specific emphasis on the imprint material and functional materials, template fabrication and release layers, and S-FIL process Variations.

引用

页码：155 / 180

页数：26

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