Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity

被引：46

作者：

Ye, ZM ^{[1
]}

Campbell, JC

Chen, ZH

Kim, ET

Madhukar, A

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

[2] Univ So Calif, Dept Mat Sci & Phys, Los Angeles, CA 90089 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2002年 / 38卷 / 09期

关键词：

D O I：

10.1109/JQE.2002.802159

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 mum. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivtiy, D*, was 10(10) cm.Hz(1)/(2)/W.

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页码：1234 / 1237

页数：4

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