Room temperature deposition of ITO using r.f. magnetron sputtering

被引：76

作者：

Gorjanc, TC ^{[1
]}

Leong, D

Py, C

Roth, D

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON, Canada

[2] Univ Ottawa, Dept Phys, Ottawa, ON K1N 6N5, Canada

[3] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V5Z 1M9, Canada

来源：

THIN SOLID FILMS | 2002年 / 413卷 / 1-2期

关键词：

indium tin oxide (208); electrical properties and measurements (112); sputtering (444); structural properties (448);

D O I：

10.1016/S0040-6090(02)00425-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Using r.f. magnetron sputtering, indium tin oxide (ITO) films were deposited at room temperature on glass substrates. The effects of sputtering power and oxygen flow rate were examined and related to the physical properties of the films such as sheet resistance, optical transparency stress, crystallinity, and porosity. We demonstrate the deposition of ITO films at room temperature with a transparency between 70 and 90% in the visible spectrum and an 18 Omega/square sheet resistance. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：181 / 185

页数：5

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