A new substrate current model for submicron MOSFET's

被引：24

作者：

Kolhatkar, JS ^{[1
]}

Dutta, AK

机构：

[1] Mentor Graph I Pvt Ltd, Hyderabad 500082, Andhra Pradesh, India

[2] Indian Inst Technol, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 04期

关键词：

ionization length; submicron MOSFET's; substrate current; velocity saturation;

D O I：

10.1109/16.831005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a new and improved substrate current model for submicron MOSFET's, which uses a simple analytical approximation of the ionization length near the drain, which in turn is based on a calculation of the electric field distribution near the drain region. The simulation results from our models for the ionization length as well as the substrate current are compared with the experimental results reported in literature, and a good match between the two is obtained.

引用

页码：861 / 863

页数：3

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