ANALYTICAL DEVICE MODEL FOR SUBMICROMETER MOSFETS

被引：32

作者：

SONODA, K

TANIGUCHI, K

HAMAGUCHI, C

机构：

[1] Department of Electronic Engineering, Osaka University, Osaka 565, 2-1, Yamada-Oka, Suita City

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 12期

关键词：

D O I：

10.1109/16.158688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new drain current model applicable to deep submicrometer MOSFET's is proposed. The new pseudo-two-dimensional device model includes velocity overshoot effect by the use of the extended drift-diffusion (EDD) model. Calculated current-voltage characteristics agree well with the reported experimental data for deep submicrometer MOSFET's. The new model is verified to be applicable to small-geometry MOSFET's down to L = 0.1-mu-m while the conventional models without the velocity overshoot are valid to 0.25-mu-m.

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页码：2662 / 2668

页数：7

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