A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: Part I (high frequencies)

In this paper, we propose a new extraction method of radiation-induced oxide-trap density (DeltaN(ot)), called Oxide-Trap based on Charge-Pumping (OTCP). This part presents the HF-OTCP method, which relies on high-frequency (HF) standard charge-pumping measurement. By applying an HF gate voltage signal, we avoid the border-trap effect in CP current (I-cp) measurements. Hence, I-cp will be only due to the interface-trap contribution. We establish, using the HF-OTCP method, that DeltaN(ot) is only dependent on DeltaV(th) (threshold voltage shift) and DeltaI(cpm) (increase of maximum CP current), where DeltaI(cpm) is caused by radiation-induced interface-trap increase (DeltaN(it)). We also clearly show that DeltaV(th) and DeltaI(cpm) can be obtained from lateral and vertical shifts of Elliot's charge-pumping curves, respectively. Thus, this new procedure allows the determination of DeltaN(ot) without needing any additional techniques. Finally, this procedure can be used in rapid hardness assurance test to evaluate both radiation-induced oxide and interface traps.